This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical. BSIM and IC simulation. Circuit simulation and compact models. BSIM – the beginning. BSIM3 – a compact model based on new MOSFET physics. : BSIM4 and MOSFET Modeling for IC Simulation (International Series on Advanced in Solid State Electronics and Technology).
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SearchWorks Catalog Stanford Libraries. Responsibility Weidong Liu, Chenming Hu. Imprint Singapore ; Hackensack, N. Physical description xix, p. Series International series on advances in solid state electronics and technology.
World Scientific Full view. Find it at other libraries via WorldCat Limited preview.
Bibliography Includes bibliographical references and index. Circuit simulation and compact models. BSIM – the beginning. BSIM4 – aimed for nm down to 20nm nodes. The intent of this book ch. Introduction and chapter objectives. Gate and channel geometries and materials. Channel DC current and output resistance. Single continuous channel charge model. Channel current in subthreshold and linear operations.
Velocity saturation and velocity overshoot. Output resistance in saturation region. Gate direct-tunneling and body currents. Gate direct-tunneling current theory and model. Charge and capacitance models.
BSIM4 and MOSFET Modeling For IC Simulation – Semantic Scholar
Intrinsic charge and capacitance models. Fringing and overlap capacitances. Non-quasi-static and parasitic gate and body resistances. Gate intrinsic-input resistance for non-quasi-static modeling.
Noise simulatoon and parameters. BSIM4 flicker noise models. BSIM4 channel thermal noise models. Source and drain parasitics: Connections of a multi-transistor stack. Source and drain of a transistor with multiple gate fingers.
BSIM4 and MOSFET Modeling For IC Simulation
Source and drain area and perimeter calculation. Saturation junction leakage current and zero-bias capacitance models. Source and drain contact scenarios and diffusion resistances.
Junction diode IV and CV models. Physical mechanisms of diode DC currents. BSIM4 junction leakage due to trap-assisted tunneling .
BSIM4 diode charge and capacitance . Diode temperature-dependence model . Review of the charge-deficit transient NQS model. Time discretization, equation linearization and matrix stamping.
Composite stamps for transient NQS model. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model.
Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
Nielsen Book Data Publication date Series International series on advances in solid state electronics and technology Reproduction Electronic reproduction.
World Scientific Publishing Co. Available to subscribing institutions. ISBN electronic bk.